Momang A. Yusuf, Ahmad Rosikhin, Jasruddin D. Malago, Fatimah A. Noor, Toto Winata
One promising method for growing carbon-based materials, especially for electronics and optoelectronics application, is PECVD (Plasma Enhanced Chemical Vapor Deposition). In addition to the large-area thin film obtained, this method also requires relatively lower growth temperature. By modifying the PECVD reactor through the application of Hot-Wire Cell (HWC) placed between two electrodes (called In Plasma, IP), and plasma generator frequency of 70 MHz which is categorized as Very High Frequency (VHF), graphene flakes have been successfully grown by using methane (CH4) gas as precursor at pressure 300 mTorr and substrate temperature of 275oC on corning glass substrate. This result indicates that this method is potentially to grow graphene at lower temperature by adjusting several growth parameters, especially temperature of hot wire cell that plays important role in the deposition process. It should be noted that important factor that greatly determined the successful of graphene flakes growth was the use of metal catalyst in the form of very thin film. In this research, silver was used as metal catalyst which was prepared by evaporation method and then annealed at 600oC for 30-60 minutes. © 2019 Trans Tech Publications Ltd, Switzerland.
PECVD Laboratory, Physics of Electronics Materials Research Group, Physics Department, Bandung Institute of Technology, Jl. Ganesa 10, Bandung, 40132, West Java, Indonesia; Physics of Materials Laboratory Physics Department, Mathematics and Natural Science Faculty, State University of Makassar, Jl. Mallengkeri Raya, Makassar, Indonesia
