A. Momang Yusuf, Jasruddin
Application of graphene, either as an active layer or as a transparent conductive layer in crystalline silicon-based solar cells has been widely carried out. In contrast, for amorphous silicon-based solar cells, the application of graphene has not been widely performed. In fact, amorphous silicon-based solar cells can be an alternative photovoltaic device that is more economical and flexible than solar cells from crystalline silicon materials. In this study, we grew graphene by using PECVD method for amorphous/microcrystalline silicon-based solar cells application. Based on our results, it was found that graphene could be obtained at temperature of 300oC, pressure of 500 mTorr, and gas flow rate of methane of 30 sccm. The graphene was grown on a glass substrate that had been previously coated with nickel layer as catalyst for graphene growth. The results of UV-Vis measurements showed that the transmittance of the graphene sample was 65% at a wavelength of between 440 nm to 800 nm. By using Tauc method, we estimated the bandgap of the sample was of 2.92 eV. Based on the analysis of the Raman spectrum of the sample, the graphene sample tends to be of the p-type. With these characteristics, the resulting graphene layer has the potential to be applied as a p-type layer in amorphous/microcrystalline silicon-based solar cells. © 2025 Institute of Physics Publishing. All rights reserved.
Laboratorium Fisika Material Program Studi Fisika Jurusan Fisika FMIPA, Universitas Negeri Makassar, Jl. Mallengkeri, Makassar, Indonesia
