Ajeng Eliyana, Rustan Ruslan, Aveni Christy Keintjem, Jasruddin Daud Malago, Toto Winata
The effect of temperature substrat on the growth of carbon nanotubes (CNTs) with a Ni catalyst precursor were studied, where the CNTs were grown by HWC in plasma-VHF-PECVD method. The Ni catalyst was grown on a glass substrate utilizing the evaporation method, with parameters such as deposition time 50 seconds, annealing temperature 500 °C for 4.5 hours. Morphological characterization of the Ni catalyst was done using a Scanning Electron Microscope (SEM). Subsequently, the Ni catalyst served as a growth precursor for CNTs with parameters such as CH4 gas flow rate of 80 sccm and a pressure of 300 mTorr for 60 minutes. Substrate temperature was varied at 250, 275 and 300 oC. Characterization of the CNT thin layer using SEM, and Raman spectroscopy produced ID/IG values of 0.94, 1.14, and 1.06, respectively. From the comparison of the intensity ratio of the D-band and G-band, the optimum temperature for CNT growth was 250 oC. © 2025 Institute of Physics Publishing. All rights reserved.
Department of Physics, Institut Teknologi Bandung, Bandung, Indonesia; Department of Physics, Institut Teknologi Sumatera, South Lampung, Indonesia; Department of Physics, State University of Makassar, Makassar, Indonesia
